SI6426DQ |
RFQ for SI6426DQ Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| SI6426DQ | - | - | - |
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (2.5V to 8V).
Typical Application |
Features |
| • Battery protection• DC/DC conversion• Power management• Load switch | • 5.4 A, 20 V RDS(ON) = 35 m @ VGS = 4.5 V RDS(ON) = 40 m @ VGS = 2.5 V• Extended VGSS range (±8V) for battery applications• High performance trench technology for extremely low RDS(ON)• Low profile TSSOP-8 package |
| Symbol | Parameter | Ratings | Units | |
| VDSS | Drain-Source Voltage | 20 | V | |
| VGSS | Gate-Source Voltage | ±8 | V | |
| ID | Drain Current Continuous | (Note 1a) | 5.4 | A |
|
Pulsed |
30 | |||
| PD | Power Dissipation | (Note 1a) | 1.4 | W |
| (Note 1b) | 1.1 | |||
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 to +150 | °C | |
